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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3678 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS Switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 900 800 7 3 6 1.5 UNIT V V V A A A W ae ae Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3678 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-0.3A ; VCE=12V 10 50 6 MIN 800 0.5 1.2 100 100 30 pF MHz |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT Switching times ton ts tf IN Fall time Turn-on time Storage time CHA E SEM NG OND IC TOR UC 1.0 5.0 1.0 |I |I |I s s s IC=1A; IB1=0.15A;IB2=-0.5A RL=250| ,VCC=250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3678 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3678 CHA IN E SEM NG OND IC TOR UC 4 |
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